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| RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17434. Features * 12A, 350V and 400V * rDS(ON) = 0.380 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40 PACKAGE TO-218AC TO-218AC BRAND RFH12N35 RFH12N40 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-218AC SOURCE DRAIN GATE DRAIN 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFH12N35, RFH12N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH12N35 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 350 350 12 24 20 150 1.2 -55 to 150 300 260 RFH12N40 400 400 12 24 20 150 1.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 350 400 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2 VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) RFH12N35, RFH12N40 30 105 480 140 4 1 25 100 0.380 4.56 50 150 750 200 3000 900 400 0.83 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFH12N35 RFH12N40 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction-to-Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 12A, VGS = 10V, (Figures 6, 7) ID = 12A, VGS = 10V ID 6A, VDD = 200V, RG = 50, VGS = 10V, RL = 33 (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 6A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 950 MAX 1.4 UNITS V ns 2 RFH12N35, RFH12N40 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0.8 Unless Otherwise Specified 14 12 10 8 6 4 2 0 25 0.6 0.4 0.2 0.0 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC, TJ = MAX RATED ID (MAX) CONTINUOUS 25 PULSE DURATION = 80s DUTY CYCLE 2% ID, DRAIN CURRENT (A) 20 VGS = 20V VGS = 8-10V VGS = 7V VGS = 6V VGS = 5V ID, DRAIN CURRENT (A) 10 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 15 10 1 5 VGS = 4V 0.1 0 1 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 1000 0 2 4 6 8 10 12 14 16 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 30 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 6 0 0 10 20 30 ID, DRAIN CURRENT (A) 40 TC = 25oC TC = -40oC TC = 125oC VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 20 10 TC = 125oC 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TC = -40oC FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 3 RFH12N35, RFH12N40 Typical Performance Curves 4 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 12A VGS = 10V PULSE DURATION = 80s NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 2 ID = 250A VDS = 5V 3 1.5 2 1 1 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 3000 300 VDD = BVDSS 200 GATE SOURCE VOLTAGE RL = 33.3 IG(REF) = 2.5mA VGS = 10V 8 VDD = BVDSS 6 2000 CISS 4 1000 COSS CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 100 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 2 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFH12N35, RFH12N40 Test Circuits and Waveforms (Continued) CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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